Plasma Enhanced Modification of Graphene For Supercapacitors

• Main Authors: Huang, Hsiang-Yu, 黃翔煜
• Other Authors: Chuen-Chang Lin
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/20603866822651366530

碩士 === 國立雲林科技大學 === 化學工程與材料工程系 === 102 === In this study, graphene were prepared by chemical vapor deposition at various cooling rates, then the N-doped grapheme were prepared by nitrogen plasma for supercapacitor electrode material, finally all graphene electrode electrochemical properties will be analyzed. The surface form of graphene was observed by scanning electron microscope. graphene layers and defects were analyzed by Raman spectroscopy, nitrogen functional groups and quantification were determined by XPS, electrochemical properties were determined by using cycle voltammetry. Experimental results showed that the graphene by chemical vapor deposition at 108℃/min, have a higher specific capacitance. The specific capacitances are 57.8 F/g at scan rate of 100 mVs-1. N-doped graphene by nitrogen plasma at 100 W and 30 min has the best value of 150.5 F/g .