Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process

碩士 === 淡江大學 === 物理學系碩士班 === 103 === Diamond films possess high hardness, god tribological properties, superb electron field (EFE) properties and high thermal conductivity. They have great potential for applications such as electron field emitters, microelectromechanical devices, biomaterials, surfac...

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Main Authors: Hsin-Tse Chang, 張信澤
Other Authors: I-Nan Lin
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/77603278460589372884
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spelling ndltd-TW-103TKU051980132016-08-12T04:14:32Z http://ndltd.ncl.edu.tw/handle/77603278460589372884 Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process 孕核層對於微波電漿化學氣相沉積法偏壓成長之鑽石薄膜導電性的影響 Hsin-Tse Chang 張信澤 碩士 淡江大學 物理學系碩士班 103 Diamond films possess high hardness, god tribological properties, superb electron field (EFE) properties and high thermal conductivity. They have great potential for applications such as electron field emitters, microelectromechanical devices, biomaterials, surface acoustic wave devices. Diamond films can be microcrystalline (MCD), nanocrystalline (NCD) an ultrananocrystalline (UNCD), among which the UNCD films exhibit the most smooth surface, the best conductivity and moreover, the best EFE properties. In first part of research, we investigated the effect of different substrate materials on the growth behavior of UNCD films. We grew diamond films on (i) bare-Si, (ii) UNCD coated Si (non-biased) and (iii) UNCD/SI (bias grown) using CH4(6%)/N2 plasma, without bias or under bias. In the second part of research, based on the optimum parameters developed in the first part of research, we bias-enhanced grew diamond films on UNCD/Si (without bias) for 10-60 min, examine the development of microstructure of the UNCD films and the related EFE properties. We observed that the CH4/N2 beg-grown diamond films on UNCD (no bias)?Si substrates exhibit superior conductivity/EFE properties to other kind of diamond films. We examined the granular structure of thus obtained UNCD films using TEM and observed that these films contain needle-like diamond grains encased with nano-graphitic layers. The size of needle-like diamond grains is 5 nm in diameters and ~150 nm in length, which has better aspect ratio than conventional diamond films with wire-like granules structure. The incorporation of 0.1%H2 resulted in needle-like diamond grains of smaller aspect ratio, which degraded the conductivity/EFE properties of the UNCD films. I-Nan Lin 林諭男 2015 學位論文 ; thesis 104 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 淡江大學 === 物理學系碩士班 === 103 === Diamond films possess high hardness, god tribological properties, superb electron field (EFE) properties and high thermal conductivity. They have great potential for applications such as electron field emitters, microelectromechanical devices, biomaterials, surface acoustic wave devices. Diamond films can be microcrystalline (MCD), nanocrystalline (NCD) an ultrananocrystalline (UNCD), among which the UNCD films exhibit the most smooth surface, the best conductivity and moreover, the best EFE properties. In first part of research, we investigated the effect of different substrate materials on the growth behavior of UNCD films. We grew diamond films on (i) bare-Si, (ii) UNCD coated Si (non-biased) and (iii) UNCD/SI (bias grown) using CH4(6%)/N2 plasma, without bias or under bias. In the second part of research, based on the optimum parameters developed in the first part of research, we bias-enhanced grew diamond films on UNCD/Si (without bias) for 10-60 min, examine the development of microstructure of the UNCD films and the related EFE properties. We observed that the CH4/N2 beg-grown diamond films on UNCD (no bias)?Si substrates exhibit superior conductivity/EFE properties to other kind of diamond films. We examined the granular structure of thus obtained UNCD films using TEM and observed that these films contain needle-like diamond grains encased with nano-graphitic layers. The size of needle-like diamond grains is 5 nm in diameters and ~150 nm in length, which has better aspect ratio than conventional diamond films with wire-like granules structure. The incorporation of 0.1%H2 resulted in needle-like diamond grains of smaller aspect ratio, which degraded the conductivity/EFE properties of the UNCD films.
author2 I-Nan Lin
author_facet I-Nan Lin
Hsin-Tse Chang
張信澤
author Hsin-Tse Chang
張信澤
spellingShingle Hsin-Tse Chang
張信澤
Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process
author_sort Hsin-Tse Chang
title Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process
title_short Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process
title_full Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process
title_fullStr Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process
title_full_unstemmed Influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma CVD process
title_sort influence of nucleation layer on the conductivity of diamond films synthesized by bias-enhanced microwave plasma cvd process
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/77603278460589372884
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