| Summary: | 碩士 === 淡江大學 === 物理學系碩士班 === 103 === This article is mainly for the semiconductor and related materials thermoelectric materials Cu2Se. We compare the sample concentration changes and doping with the absorption spectroscopy of X-ray Absorption Near Edge Structure and Extended X-ray Absorption Fine Structure. The results indicate that after we reduce the concentration of Cu, its main hole-carriers and Cu valence increases, thereby increasing its electrical conductivity. The change in the distribution of antifluorite structure of Cu reduce its phonon thermal conductivity as we reduce the concentration of Cu. Se is not involved in electron transfer, but doped Ni, Se will participate in electron transfer, electron transfer from Cu to Ni, and its antifluorite structure of the static lattice disorder increase will reduce the phonon thermal conductivity.
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