Characteristics of InN thin film by annealing and ion implant
碩士 === 國立臺北科技大學 === 資源工程研究所 === 103 === In this study, InN thin films were implanted with different amount of Mn ion and been rapid thermal annealing at 500℃ for 20 minutes. XRD analysis showed that all films were high quality wurtzite structure which were grown by c-axis. Williamson-Hall plot metho...
| Main Authors: | , |
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| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jvu799 |