Characteristics of InN thin film by annealing and ion implant

• Main Authors: Jia-Wei Lin, 林家偉
• Other Authors: 張本秀
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/jvu799

碩士 === 國立臺北科技大學 === 資源工程研究所 === 103 === In this study, InN thin films were implanted with different amount of Mn ion and been rapid thermal annealing at 500℃ for 20 minutes. XRD analysis showed that all films were high quality wurtzite structure which were grown by c-axis. Williamson-Hall plot method illustrated the change of lattice constant and strain. The use of scanning electron microscope (SEM) with EDS observed the change of elements content in samples. All films were n-type semiconductors by van-der Pauw mode of Hall measurement. The optical properties were investigated by Raman measurement. Room temperature magnetism were measured by VSM. SQUID measured the hysteresis loop of the samples at 2.2K.We found the implantated samples were showed both diamagnetism of superconducting phase (Meissner effect) and ferromagnetism, but undoped samples did not show the phenomenon. The results showed that the source of ferromagnetism were performed by the substrate and the buffer layer, diamagnetism of superconducting phase were performed by InN:Mn. InN:Mn was type II superconductor, and it’s lower critical field Hc₁(2.2K) was about 150 Oe.