The effect of boron dopant on the oxidation temperature and wear resistance of diamond film

• Main Authors: Feng-Chi Ku, 古峰錡
• Other Authors: Sea-Fue Wang
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22103TIT05159054%22.&searchmode=basic

碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 103 === The purpose of this study was to prepare boron-doped diamond thin film by Hot Filament Chemical Vapor Deposition (HFCVD). During deposition, one evaporating dish was introduced into the system and boron oxide powders were used as source of the boron dopant. By applying different temperatures (650℃, 750℃, and 850℃) to the evaporating dish and pouring different concentrations of methane (1%, 2%, 4%, and 6%) into the system, boron was doped into the diamond thin film. After deposition, the boron-doped diamond thin film was characterized by Scanning Electronic Microscopy (SEM), Raman Spectroscopy, Hall effect, X-ray Photoelectron Spectroscopy (XPS), and Electron Probe Microanalyzer (EPMA). The effect of the boron dopant on oxidation temperature and wear resistance was also investigated by Thermal Gravimetric Analysis (TGA) and Pin-on-Disk Tribometer. At a methane concentration of 2% and an applying temperature of 750℃, the boron-doped diamond thin film showed an oxidation temperature of 967℃. This value was higher than that of the un-doped diamond film by 170℃. The bulk concentration in boron-doped diamond thin film was 2.83 x 1018/cm3. The electron mobility and the electrical resistivity was 9.27 x 10 cm2/Vs and 2.38 x 10-2 Ωcm, respectively. According to Pin-on-Disk Tribometer test, the wear rate of the boron-doped diamond thin film was 7.2 x 10-6 mm3/Nm.