| Summary: | 碩士 === 南臺科技大學 === 電子工程系 === 103 === In this thesis, by the RF sputtering technique, the Zn2SiO4 thin films were deposited on the ITO/Glass substrate, and the Aluminum were vaporized on the films to form a metal/insulator/metal resistive random access memory structure. The physical and electric influences for different contents of oxygen concentration were investigated. According to the optimal sputtering parameters, the rapid thermal annealing and supercritical fluid techniques were further used to improve the thin film qualities, and the optimal operated times and on/off ratios were obtained. Finally, the resistive switching characteristics and conduction mechanism were also investigated.
It can be seen from the results that as the oxygen concentration was 40 %, the Zn2SiO4 thin films revealed better on/off ratio of 3 order, operated voltage was about 1.5 V, leakage current was 10-7 A, but the operated time was only 5 ~ 10 returns. After improving the quality of the optimal thin films by the rapid thermal annealing, as the annealing temperature was 450 ℃, the on/off ratio of 3 order and smaller operated voltage (about 0.5 V) could be obtained. The leakage current was 10-7 A and the operated times could be improve to at least 100 returns. Furthermore, as the low temperature supercritical fluid technique was used to improve the optimal thin films, the operated times could also be improve to at least 100 returns, however, the on/off ratio could be improve to 4 order, operated voltage was only 0.8 V, and the leakage current could be lowdown to only 10-9 A. This means that the low temperature supercritical fluid technique can improve the switching properties of the resistive random access memory greatly.
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