Study on High Conductive and Transparent Copper on Zinc Oxide Thin Film

• Main Authors: Chia-Hsien Wu, 伍家顯
• Other Authors: Po-Hsun Lei
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/zvtt7p

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 103 === In thesis of this page, using a dual plasma enhanced metal organic chemical vapor deposition (DPEMOCVD) Whom apparatus grow up under low temperature Zinc Oxide (ZnO) thin film, its average printing opacity rate is 87%, the resistivity is 6.94Ωcm. And then disperse with the body of ultrasonic powder, spread Copper and endure the rice particle in ZnO thin film. Analyze different the intersection of weight and the intersection of percentage and the intersection of Copper and powder, Polyvinylpyrrolidone (PVP) Thickness, different annealed temperature, different annealed time, to the influence ZnO thin film characteristic. Copper powder best percentage 0.25wt% three minute and the intersection of temperature and 500℃ in annealed time, it is 5.26×10-3 Ωcm that Copper endures the rice particle and scatters in the resistivity of ZnO, penetrating rate is 82% on average, Figure of meri is 7.05×10-4 Ω-1, Copper not grown up endure the intersection of rice and particle spread, ZnO (002) in the membrane until XRD analyze Peak value and Copper (111) Peak value. Use Polyvinylpyrrolidone (PVP) Macromolecule dispersant can make Copper endure the difficult reunion of rice particle, the best PVP thickness is 1×10-5M, until annealed time three minute and the intersection of temperature and 500℃, can make the resistivity reach 2.1×10-3Ωcm, and it is 80.4% to penetrate leading, Figure of meri is 1.026×10-3Ω-1.