Quantum Transport Properties in Gate-Controlled Spin Devices
碩士 === 國立聯合大學 === 機械工程學系碩士班 === 103 === The thesis investigates quantum transport properties in the gate-controlled spin device (GCSD).This GCSD system utilize high mobility two-dimensional electron gas to transport and its width can be controlled by a pair of spilt-gate. We consider the influence o...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86213241230320935853 |
| Summary: | 碩士 === 國立聯合大學 === 機械工程學系碩士班 === 103 === The thesis investigates quantum transport properties in the gate-controlled spin device (GCSD).This GCSD system utilize high mobility two-dimensional electron gas to transport and its width can be controlled by a pair of spilt-gate. We consider the influence of the Rashba and Dresselhaus spin-orbit interactions and an applied longitudinal magnetic field induced Zeeman effect. Moreover, we compare of the single gate-controlled and the double gate-controlled quantum transport properties. We perform numerical simulation to demonstrate the peak structures of conductance corresponding to resonant state (RS), electron-like quasi-bound state (EQBS), or hole-like bound state (HBS) in the strong spin-coupling effects. Our research pave the way to provide a fundamental theory for the design of prototype spin devices to deal with quantum message or storage.
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