| Summary: | 碩士 === 國立聯合大學 === 電機工程學系碩士班 === 103 === There are two main subjects in this paper. The first part is a new microwave dielectric ceramic, and does not affect the sintering temperature when sintering temperature decreases. The second part is a new LTE Antenna for 2.62GHz.
In the first part, the microwave dielectric properties of Bi12MxSi1-xO20 (M=Zr, Ce,<x=0.01-1>) and (Bi1-xLax)12SiO20 (x=0.01-0.07). From the experiment result that Bi12Zr0.01Si0.99O20 sintering temperature at 810℃ for 5h, ε_r~ 37.1, Q×f ~7600GHz, τ_f~ -27.2 ppm/℃. From the experiment result that Bi12CeO20 sintering temperature at 780℃ for 5h, ε_r~ 27.0, Q×f ~ 10640GHz, τ_f~ -184.4 ppm/℃. From the experiment result that (Bi0.99La0.01)12SiO20 sintering temperature at 810℃ for 5h, ε_r~ 36.7, Q×f ~ 2140GHz, τ_f~ -37.6 ppm/℃.
In the second part, designed a LTE Antenna for 2.62GHz. Finally, the LTE Antenna is implemented on FR4 and Bi12CeO20 substrates and compare the component characteristics.The Bi12CeO20 ceramic have high ε_r and high τ_f.Use the high τ_f for temperature sening and the high ε_r for volume reduce.
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