New self-assembled Method of Additives on the Advanced Copper Electroplating for Application of Microelectronic

• Main Authors: Wang yen chi, 王彥其
• Other Authors: Yang wen pin
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/75948789408263841953

碩士 === 國立聯合大學 === 化學工程學系碩士班 === 103 === This study is investigated for new self-assembled method of two stage. At first stage as dipping, the accelerator promotes to reduction for copper ions in microvia. At second stage as electroplating, suppressor and leveler inhibits to reduction for copper ions on cathode surface. Electrochemical analysis is investigated by cyclic linear sweep voltammetry (CLSV) and potentiostatic measurements (PM). Additionally, we go around experiment for electroplating and compare with result of electrochemical analysis. The results of electrochemical analysis showed that when cupric electroplating bath have exist MPSA(accelerator) only, MPSA will detach form cathode surface with shear force increasing. When Cl- and MPSA have exist in cupric electroplating bath, the strong adsorption have difficult to detach MPSA from cathode surface. According to results of analysis, MPSA in dipping bath only is best recipe at first stage. The feasibility of theory has been confirmed from results of electrochemical analysis. The results of electroplating morphology analysis showed that the strength and distribution uniformity of shear force is important in dipping (first stage) and influence surface thickness and microvia filling morphology in electroplating chips(second stage). Finally, we attain RDT quantity equal to 14 in the best term (the hole dimension is diameter= 30μm, depth=50μm). As a result, the feasibility that self assembled method replace general commercial electroplating method is proved by this study.