| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 103 === For the applications in infrared therapy, this thesis focuses on
developing infrared thermal emitter devices, whose wavelength ranges
from 4~12 μm. In order to select and control wavelength, we utilize the
surface plasma induced by abrupt junction between a metal layer and a
dielectric layer. Photonic crystals are also adopted to make light output
directive, and enhance the surface plasmonic effect. After simulating the
effect on wavelength by varying the material and hole period, we design
emitters whose wavelengths are 7.2 μm, 9.2 μm, 11.2 μm, respectively.
We fabricate the thermal emitters on a SOI substrate that is favorable
for realizing the heating elements and simplifying the related process.
The top silicon layer of the SOI wafer is undoped, so ion diffusion is
carried out to increase the conductivity. The measured resistance by four
point probe for device sizes of 3.8×1.7 mm2 , 4.8×1.7 mm2 , and
5.8×1.7 mm2 is 116 Ω, 92 Ω, and 76 Ω, respectively. The surface
temperature measured by thermocouple can be up to 240 ℃ and the
emitted power measured by infrared photodiode can reach 1.13 mW. The
emitted light spectrum is measured with FTIR. The wavelength can
change with the hole period, from 7.2 μm to 8.3 μm. Therefore, we
successfully realized the infrared emitters of which the wavelength can be
controlled by the hole period of the photonic crystals.
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