FAWB: A File-Aware Write Buffer Management Method for Flash Memory

• Main Authors: Kuo-Yi Chao, 趙國逸
• Other Authors: Chin-Hsien Wu
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/64930631610658302088

碩士 === 國立臺灣科技大學 === 電子工程系 === 103 === NAND flash memory has very distinct characteristics: the out-of-place update and the endurance problem. The out-of-place update means that data can’t be overwritten to the same place unless the residing block is erased first. The endurance problem means that each flash memory block can endure limited times of erase operations (e.g., 10,000 100,000 times) and could suffer from access errors when beyond the limited times. Therefore, the out-of-place update can cause a lot of erase operations and damage the system performance. The endurance problem can damage the lifetime of NAND flash memory.In order to improve the performance and lifetime of NAND flash memory, a flash-aware write buffer is used to buffer the frequently accessed data and reduce a lot of write and erase operations. Based on our observations, we find that the page read cache mode and the multi-channel I/O parallelism can improve the current flash-aware write buffer schemes. We want to integrate the concept of the page read cache mode and the multi-channel I/ O parallelism into the design of the flash-aware write buffer schemes. According to the experimental results, the proposed method can improve the effectiveness of the current flash-aware write buffer schemes.