Copper doped p-type nickel oxide transparent conducting oxide thin films

• Main Authors: Ting-Fu Chu, 朱庭甫
• Other Authors: Liang -Chiun Chao
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/44025406112552036289

碩士 === 國立臺灣科技大學 === 光電工程研究所 === 103 === Nickel oxide with/without doping of Cu has been deposited by reactive ion beam sputter deposition. Effects of oxygen partial flow rates, deposition temperatures, and Cu concentrations on the electrical and optical properties of nickel oxide have been characterized. The resistivity of nickel oxide deposited at room temperature was found to decrease as oxygen partial flow rate increases, which is attributed to the increased concentration of nickel vacancies. Cu doped nickel oxide deposited at 150 and 300C by 100% oxygen ion beam results in the formation of single phase crystalline Ni1-xCuxO with x up to 0.5. The resistivity of Ni1-xCuxO was found to decrease as x increases, which is also due to increased metal vacancy defects. The transparency of Ni1-xCuxO was found to increase as deposition temperature increases, while doping of Cu results in decrease of band gap. UPS analysis indicates that high concentration of Cu (x = 0.5) results in the reduction of work function of Ni1-xCuxO from 5.2 to 4.2 eV.