Design of GaAs Low Noise Amplifier at Millimeter Wave and Research on Millimeter Wave System Package and Key Components

• Main Authors: You-Tang Lee, 李祐棠
• Other Authors: Huei Wang
• Format: Others
• Language: en_US
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/70078294358121414670

碩士 === 國立臺灣大學 === 電信工程學研究所 === 103 === In this thesis, we demonstrate the design and measurement results of an E-band low noise amplifier (LNA) and a W-band wideband tripler. Furthermore, the integration and measurements result of a 60 GHz transmitter system are also demonstrated. First part is the low noise amplifier used in the application of radio astronomical telescope E-band receiver. The LNA is designed and fabricated in high electron mobility transistor using small-signal model. Targeted working range is 62 to 77 GHz. The measurement result and simulation result are in good agreement with each other, proving the accuracy of the model. The next is a frequency tripler, which will be used as a W-band signal source, fab-ricated in 65-nm advanced CMOS technology. Transformer is used in this tripler to achieve impedance matching between stages. The measured performance fit well with simulation. Peak conversion gain of the tripler is larger than 1 dB, with 3 dB bandwidth from 57 to 78 GHz, which is 31 % of fractional bandwidth. The last part is integration and measurement of a 60 GHz transmitter system. Sys-tem circuits are fabricated in 65-nm CMOS technology. System is packaged in low temperature co-fired ceramic (LTCC), and integrated with passive components such as antennas and bias network. It shows small signal gain of 28 dB, saturation power larger than 7 dBm and output power at 1 dB compression over 3 dBm.