Fabrication and Characterization of Ge and GeSnMISCAPs
碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === Recently, semiconductor industry technology has followed the path of scaling trend based on Moore’s Law. But conventional planar Si MOSFETs is approaching its fundamental scaling limits. For the continuation of the scaling trend, high mobility materials have be...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18272669741249640823 |