Manipulation of Quantum Confined Stark Effect in GaN-Based Light-Emitting Diode by Microstructure on Substrate
碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === GaN-based light-emitting diodes (LEDs) are typically grown on c-plane sapphire, or even patterned sapphire substrates (PSSs). In the same growth condition, we adopt wet etching to fabricate our PSSs with structure depth about 0.5µm instead of dry etching with...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73983041915651756351 |