HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy
碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We ho...
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51062473142267347901 |
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ndltd-TW-103NTU054280472016-07-02T04:21:19Z http://ndltd.ncl.edu.tw/handle/51062473142267347901 HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy 利用分子束磊晶搭配氧氣電漿成長二氧化鉿於矽/砷化銦基板 Chang- Ying Chen 陳昶穎 碩士 國立臺灣大學 電子工程學研究所 103 In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We hope we can get a better result by different surface treatments . Hao-Hsiung Lin 林浩雄 2014 學位論文 ; thesis 52 zh-TW |
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NDLTD |
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zh-TW |
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Others
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NDLTD |
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碩士 === 國立臺灣大學 === 電子工程學研究所 === 103 === In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We hope we can get a better result by different surface treatments .
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| author2 |
Hao-Hsiung Lin |
| author_facet |
Hao-Hsiung Lin Chang- Ying Chen 陳昶穎 |
| author |
Chang- Ying Chen 陳昶穎 |
| spellingShingle |
Chang- Ying Chen 陳昶穎 HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
| author_sort |
Chang- Ying Chen |
| title |
HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
| title_short |
HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
| title_full |
HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
| title_fullStr |
HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
| title_full_unstemmed |
HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
| title_sort |
hfo2 on si/ inas grown by oxygen plasma-assisted molecular beam epitaxy |
| publishDate |
2014 |
| url |
http://ndltd.ncl.edu.tw/handle/51062473142267347901 |
| work_keys_str_mv |
AT changyingchen hfo2onsiinasgrownbyoxygenplasmaassistedmolecularbeamepitaxy AT chénchǎngyǐng hfo2onsiinasgrownbyoxygenplasmaassistedmolecularbeamepitaxy AT changyingchen lìyòngfēnzishùlěijīngdāpèiyǎngqìdiànjiāngchéngzhǎngèryǎnghuàjiāyúxìshēnhuàyīnjībǎn AT chénchǎngyǐng lìyòngfēnzishùlěijīngdāpèiyǎngqìdiànjiāngchéngzhǎngèryǎnghuàjiāyúxìshēnhuàyīnjībǎn |
| _version_ |
1718333351834681344 |