The Development of AlN/GaN Light Emitting Diode Grown by Plasma-Enhanced Atomic Layer Deposition
碩士 === 國立臺灣大學 === 光電工程學研究所 === 103 === In this thesis, we present the operational procedure of plasma enhanced atomic layer deposition (PE-ALD) system and the growth, analysis, fabrication, characterization of Si-based nitride light emitting devices. The following instrument of X-ray photoelectron s...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/86534039535869839984 |