The Effect of Copper Substrate Compounds on Graphene Growth

• Main Authors: Wen-Hsiu Tsai, 蔡文修
• Other Authors: Ta-Wei Lin
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/76628955929444438061

碩士 === 國立臺南大學 === 機電系統工程研究所 === 103 === In this research, we investigate the graphene growth on four types of industrial copper ribbon. The graphene thin film synthesized by low pressure chemical vapor deposition (LPCVD) method. Both of the Argon and (CH4/H2) mixture are the precursors for different deposition time in a range from 5 to 30min. The surface morphology and grain growth behavior of these films were studied by Field-emission Scanning Electron Microscope observation. Impurities on the Cu substrate behaved as the nucleation sites in the formation of carbon cluster on Cu surface. The morphology for these 4 types substrates is constituted by carbon disc in the range of 1 ~100 micrometer. Fractal geometry has been observed to study a variety of irregular films within a jigsaw of the variance grain structures. At last we transfer four type samples on SiO2 wafer than investigate by raman spectroscopy respectively. Based on these results, we suggest that the growth of graphene thin films can be described by the fractal dynamics. The distribution of the surface impurities enhances grain structure homogeneous and better quality of the graphene film.