Aluminum Doped Hafnium Dioxide as Ferroelectric Material in MOS Structure
碩士 === 國立清華大學 === 工程與系統科學系 === 103 === Ferroelectric material and its fabrication have been researched for decades, but it still suffers from many drawbacks which makes it cannot be commercialized. Recently these problems seem to be possible to be solved because ferroelectricity in Hf-based material...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03177908406549474330 |