Interfacial Layers with Thermal and Nitrogen Treatments on Electrical Characteristics of Germanium MOSFETs Device
碩士 === 國立清華大學 === 工程與系統科學系 === 103 === To further scale down equivalent oxide thickness (EOT) and get good electrical properties, a high quality Ge oxide interfacial layer (IL) is one of the key challenges for Ge MOS devices. A GeO2 formed by H2O plasma deposition in an ALD is used as a main IL in t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vcnuqy |