| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 103 === In this research work, we fabricated a-Si:H and poly-Si thin-films by using inductively coupled plasma enhanced chemical vapor deposition system with low inductance antenna. The a-Si:H and poly-Si thin-films have different band gaps for absorber layers to get the full photovoltaic potential of both. We controlled the parameters such as pressure, power, flow rate, and thickness. These modulations can obtain better property. The conductivity of poly-Si n layer was 1.553Ω-1cm-1. It was the best n layer in our research. The crystalline volume fraction of poly-Si i layer was 83.72%, it can be obtained by high power and high pressure. We tried to change the thickness of poly-Si i layer and analyzed the results of these solar cells. Amorphous layers were deposited in NCTU, and then we finished the SPA solar cell. The efficiency can achieve 3.243%, after annealing in hydrogen, the efficiency of this solar cell increased to 4.418%.
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