Design and Fabrication of GaN-Based SBDs on Silicon for Suppressing Surface Leakage Current

Design and Fabrication of GaN-Based SBDs on Silicon for Suppressing Surface Leakage Current

碩士 === 國立清華大學 === 電子工程研究所 === 103 === AlGaN/GaN HEMT have attracted considerable interests for high speed and high power switching application due to the outstanding electronic properties including high sheet charge density (>1013 cm-2) of the two dimensional electron gas (2DEG), high thermal con...

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Bibliographic Details
Main Authors:	Wu, Ping Sheng, 吳秉昇
Other Authors:	Hsu, Shuo Hung
Format:	Others
Language:	en_US
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/14884989827156989253

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