Fabrication of fast program/erase charge-trapping non-volatile memory using barrier-engineered dielectric and ultra-thin epi-like Si channel
碩士 === 國立清華大學 === 電子工程研究所 === 103 === In this thesis, Pulse Laser Crystallization/green nanosecond laser spike annealing technique is applied to fabricate crystallized active layer channel, which consists of high quality poly-silicon material known as epi-like Si, of non-volatile memory (NVM). This...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uf86ga |