Fabrication of Graphene/Zinc Oxide Junction Field Effect Transistor with High On-off Ratio and High Mobility
碩士 === 國立清華大學 === 材料科學工程學系 === 103 === Graphene possesses excellent chemical stability, high carrier mobility, and unique optoelectrical properties at atomic level, which was considered as a promising material to replace Si in semiconductor industry. In this study, the chemical vapor deposition meth...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90919428678831289348 |