Copper-Catalyzed Oxidative Povarov Reactions and Synthesis of Novel Precursors of Silicon Nitride Film

• Main Authors: Lin, Rong Jing, 林容靖
• Other Authors: Liu, Rai Shung
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/35354503763208539699

碩士 === 國立清華大學 === 化學系 === 103 === Abstract This thesis is divided into two sections, the first chapter is copper-catalyzed Povarov reaction between N-alkyl N-methylaniline and saturated heterocyclic ring. The second chapter explores synthesis the novel precursors and then uses atomic layer deposition technology to grow silicon nitride film. Chapter 1 We develop Cu-catalyzed oxidative Povarov reactions between N-alkyl N-methylanilines and saturated oxa- or thiacycles with tert-butyl hydroperoxide (TBHP). Importantly, these reactions do not involve [4π] or [2π] motifs as the initial reagents. The use of cheap alkane-based substances as building units is of mechanistic and practical interest as two inert sp3 C–H bonds are activated. Chapter 2 Given the widespread use of atomic layer deposition reaction, our goal is to generate silicon nitride film by ALD. Therefore, we design the structure of the precursors, and synthesize two novel metal precursor with four identical substituents of silicon. We use simple way to achieve the synthesis. However, limited by equipment incomplete, there is no way to use new precursors with NH3 undergoing atomic layer deposition reaction, so we use H2O to test. But the test result of ALD by using precursor II-1a and H2O is not good. My laboratory colleagues are working on improving the structure of the precursor. Once the equipment complete, we will use our novel precursors with ammonia by ALD processes one by one.