Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation

博士 === 國立中山大學 === 電機工程學系研究所 === 103 === Many digital devices such as universal serial bus, bluetooth, and digital audio player have been widely used in human daily life. Nanoscale complementary metal-oxide-semiconductor (CMOS) technology to realize these devices undoubtedly provides many advantages...

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Main Authors: Wen-Je Lu, 盧文哲
Other Authors: Chua-Chin Wang
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/c2rwgu
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spelling ndltd-TW-103NSYS54420462019-05-15T22:17:48Z http://ndltd.ncl.edu.tw/handle/c2rwgu Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation 具製程電壓溫度偵測與迴轉率補償之混合電壓輸出緩衝器 Wen-Je Lu 盧文哲 博士 國立中山大學 電機工程學系研究所 103 Many digital devices such as universal serial bus, bluetooth, and digital audio player have been widely used in human daily life. Nanoscale complementary metal-oxide-semiconductor (CMOS) technology to realize these devices undoubtedly provides many advantages, such as high operating speed, low power consumption, and small area for system-on-chip integration. However, problems associated with advanced nanoscale CMOS technology such as process, voltage, and temperature variations will become devastating in the technology evolution. Thus, this thesis proposes the process, voltage, and temperature compensation technologies, which can be applied to nanoscale CMOS, particularly, 2xVDD output buffers. A 2xVDD output buffer with a PVT detector for slew rate compensation is firstly introduced. The proposed PVT sensor is used to detect PVT corners of the buffer.According to the detected PVT corners, the PVT decision circuit turns on different current paths within the 2xVDD output buffer to compensate for the slew rate. Furthermore, the proposed design implemented by 1xVDD devices attains 2xVDD output range. Particularly, process corner sensors consisting of skew inverters for the 2xVDD output buffer are also investigated. The proposed process sensors take advantage of different transfer characteristics of skew inverters to separate the p-type and n-type MOS’s F and S corners. According to the detected PVT corners, the PVT decision circuit correspondingly turns on different current paths within the 2xVDD output buffer to compensate for the slew rate. Finally, the proposed 2xVDD output buffers are implemented using CMOS processes to justify their performance. Notably, the slew rate is significantly improved when the 2xVDD output buffer is supported by a PVT sensor for slew rate compensation and skew inverters for process corner detection. The maximum slew rate improvements are 26% and 8%, respectively, justified by physical measurements. Chua-Chin Wang 王朝欽 2015 學位論文 ; thesis 95 en_US
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language en_US
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sources NDLTD
description 博士 === 國立中山大學 === 電機工程學系研究所 === 103 === Many digital devices such as universal serial bus, bluetooth, and digital audio player have been widely used in human daily life. Nanoscale complementary metal-oxide-semiconductor (CMOS) technology to realize these devices undoubtedly provides many advantages, such as high operating speed, low power consumption, and small area for system-on-chip integration. However, problems associated with advanced nanoscale CMOS technology such as process, voltage, and temperature variations will become devastating in the technology evolution. Thus, this thesis proposes the process, voltage, and temperature compensation technologies, which can be applied to nanoscale CMOS, particularly, 2xVDD output buffers. A 2xVDD output buffer with a PVT detector for slew rate compensation is firstly introduced. The proposed PVT sensor is used to detect PVT corners of the buffer.According to the detected PVT corners, the PVT decision circuit turns on different current paths within the 2xVDD output buffer to compensate for the slew rate. Furthermore, the proposed design implemented by 1xVDD devices attains 2xVDD output range. Particularly, process corner sensors consisting of skew inverters for the 2xVDD output buffer are also investigated. The proposed process sensors take advantage of different transfer characteristics of skew inverters to separate the p-type and n-type MOS’s F and S corners. According to the detected PVT corners, the PVT decision circuit correspondingly turns on different current paths within the 2xVDD output buffer to compensate for the slew rate. Finally, the proposed 2xVDD output buffers are implemented using CMOS processes to justify their performance. Notably, the slew rate is significantly improved when the 2xVDD output buffer is supported by a PVT sensor for slew rate compensation and skew inverters for process corner detection. The maximum slew rate improvements are 26% and 8%, respectively, justified by physical measurements.
author2 Chua-Chin Wang
author_facet Chua-Chin Wang
Wen-Je Lu
盧文哲
author Wen-Je Lu
盧文哲
spellingShingle Wen-Je Lu
盧文哲
Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation
author_sort Wen-Je Lu
title Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation
title_short Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation
title_full Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation
title_fullStr Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation
title_full_unstemmed Mixed-Voltage Output Buffer with Process, Voltage, and Temperature Detectors for Slew Rate Compensation
title_sort mixed-voltage output buffer with process, voltage, and temperature detectors for slew rate compensation
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/c2rwgu
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