Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors
碩士 === 國立中山大學 === 物理學系研究所 === 103 === Recently, tunnel field-effect transistor (TFET) is one of the most promising candidates of metal-oxide-semiconductor field-effect transistors (MOSFET) because of the advantage of low operating voltage. The ultra-low power TFET can be achieved by adjusting materi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29541421134599915027 |