| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 103 === Recently, tunnel field-effect transistor (TFET) is one of the most promising candidates of metal-oxide-semiconductor field-effect transistors (MOSFET) because of the advantage of low operating voltage. The ultra-low power TFET can be achieved by adjusting materials of the source terminal and the channel to control the band gap. The working principle of TFET is that the shift of the energy band caused by applying voltage makes the valence band of the source and conduction band of the channel cross at the interface, and thus the device will be switched on by the band to band tunneling. That’s the reason why the study of the band structure of P-type/Intrinsic interface is so important. In this work, the electronic structures across P-type/Intrinsic hetero-interface of tunnel field-effect transistor have been observed by cross-sectional scanning tunneling microscopy spectroscopy locally and directly, and the band alignment of P-type/Intrinsic interface can be drawn according to its electronic structures. The experimental result shows the band structure of P-type/Intrinsic hetero-interface of TFET, and the tunneling barrier height which has an effect on the degree of consuming energy of the device.
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