Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination
碩士 === 國立中山大學 === 物理學系研究所 === 103 === In recent years, thin-film amorphous silicon solar cells has been widely studied because its production cost is cheaper than monocrystalline silicon solar cell. To improve carrier transport ability, thin-film amorphous silicon solar cell has been designed P-I-N...
Main Authors: | Yung-Chih Chang, 張永智 |
---|---|
Other Authors: | Ya-Ping Chiu |
Format: | Others |
Language: | zh-TW |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/nwnyd7 |
Similar Items
-
Atomically resolved carrier transport behavior under light illumination at heterointerfaces
by: Fei-Mam Hsiao, et al.
Published: (2018) -
Nanometer metal oxide layer on silicon for heterojunction solar cells
by: Yu-Tsu Lee, et al.
Published: (2017) -
Inelastic effects in electronic currents at the nanometer scale
by: Monturet, Serge
Published: (2008) -
Nanometer-scale placement in electron-beam lithography
by: Ferrera, Juan (Ferrera Uranga)
Published: (2005) -
Nanometer scale point contacting techniques for silicon Photovoltaic devices
by: Khoury, Rasha
Published: (2017)