| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 103 === In recent years, thin-film amorphous silicon solar cells has been widely studied because its production cost is cheaper than monocrystalline silicon solar cell. To improve carrier transport ability, thin-film amorphous silicon solar cell has been designed P-I-N structure through by growing intrinsic layer between P-layer and N-layer. The electronic properties at the P-I-N structure hetero-interface of different intrinsic material could be the crucial key to understand the carrier transport mechanism. In this work, the electronic structures across P-I-N structure hetero-interface of thin-film amorphous silicon solar cell have been observed directly by cross-sectional scanning tunneling microscopy and spectroscopy with sub-nanometer scale spatial resolution. In addition, to more detail discuss the physical phenomenon across the hetero-interface, the electronic structure has been observed under illumination. The experimental data show the electronic structures at hetero-interface of thin-film amorphous silicon solar cell with different band gap material, and the difference electronic structure near interface is caused by different carrier concentrations of the material. The electronic properties of hetero-interface of illumination be observed the carrier densities increase on P-layer and N-layer.
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