Construction of MBE Growth System and Epitaxial Ni Thin Film Characterization

• Main Authors: Ye, Jun-Hong, 葉俊宏
• Other Authors: Chen, Jiunn
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/37594541281239223449

碩士 === 國立屏東大學 === 應用物理系碩士班 === 103 === This paper present the construction and the testing of Molecular Beam Epitaxy thin film growth system under the consign agreement between National Pingtung University (NPTU) and National Synchrotron Radiation Research Center (NSRRC). The constructed system is aim to the probing of electronic structure associated with optical, magnetic, and mechanical properties. Our preliminary studies began with photoluminescence (PL) probing of bulk synthesized ZnO with various post annealing conditions, as the signature of the influence of oxygen vacancy. Spectrum weight transfer in the green light region is clearly observed. Epitaxial Ni film was chosen due to its relatively stable in ambient. Epitaxial Ni(111) thin film grown on c-plane Al2O3 were indicated by high-resolution X-ray diffraction. Four main diffraction peaks at 41.7 deg , 44.6 deg , 90.7 deg and 98.7 deg are indexed to Al2O3(0001), Ni(111), Al2O3(00012) and Ni(222), respectively. In particular, tiny signal at 39 deg and 52 deg , ~3 order of magnitude smaller as comparing to Ni(111), are observed. Possible index to 39 deg are NiO(110) or h.c.p Ni(100), while 52 deg is c.c.p. Ni(200). Characterizations based on changing growth rate, substrate temperature, and film thicknesses were fully conducted. Atomic force microscopy reveals reproducible surface morphology according to various growth conditions, indicates the its potential applying to surface costing as well as grapheme substrate. Detail orientation relationship between grown film and substrate is yet to be explored.