Research of the electro-optical &; reliability properties of high power vertical structure GaN-Base LED with P-side current distribution layer
碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === In this thesis, silicon dioxide (SiO2) p-side current distribution layer (PCD) was employed to improve current spreading of a GaN-based high power vertical structure LED. The proposed novel technology offers an advantage to improve current crowding and prev...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/22783819815350371908 |