Research of the electro-optical &; reliability properties of high power vertical structure GaN-Base LED with P-side current distribution layer

• Main Authors: Jian-Ming Lai, 賴建明
• Other Authors: Der-Yuh Lin
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/22783819815350371908

碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === In this thesis, silicon dioxide (SiO2) p-side current distribution layer (PCD) was employed to improve current spreading of a GaN-based high power vertical structure LED. The proposed novel technology offers an advantage to improve current crowding and prevent current from directly flowing downward in the vertical direction and to make current effectively spread in lateral direction of active region so that the emitted photons will not be absorbed by the n-electrode of the LED. It is different from the previous reports of the current blocking layer design . SiO2 films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on GaN-based vertical structure LED chips in 45 x 45 mil2 in size , to serve as current distribution layers (PCD) after the reflective mirror layer process step . Base on the experimental results , the LED performance compare to without PCD structure LED under an injection current of 350mA , the light output power (LOP)、external quantum efficiency (EQE)、Wall plug efficiency(WPE) were enhanced by 18.4%、18.3%、12.6% , and has better ESD characteristics and reliabilities.