A study of the doping effects on the electrical and optical properties of MoS2
碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === Undoped MoS2, Fe-doped MoS2, Co-doped MoS2, Ni-doped MoS2 and Nb-doped MoS2 layered crystals were grown by chemical vapor transport method using iodine as the transport agent. Optical properties were studied by reflectance (R) and piezoreflectance (PzR) measure...
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ndltd-TW-103NCUE54280112016-08-14T04:11:19Z http://ndltd.ncl.edu.tw/handle/89083542706342823188 A study of the doping effects on the electrical and optical properties of MoS2 摻雜對二硫化鉬光電特性之影響研究 Cheng Ching Huang 黃政景 碩士 國立彰化師範大學 電子工程學系 103 Undoped MoS2, Fe-doped MoS2, Co-doped MoS2, Ni-doped MoS2 and Nb-doped MoS2 layered crystals were grown by chemical vapor transport method using iodine as the transport agent. Optical properties were studied by reflectance (R) and piezoreflectance (PzR) measurements, while electrical properties were investigated by Hall effect measurements. In addition, undoped MoS2 and Co-doped MoS2 were method using the photoconductivity (PC) and persistent photoconductivity (PPC) measurements. According to electron spectroscopy for chemical analysis (ESCA) measurements, the results confirm that the dopants actually exist in the doped MoS2 samples. Two direct band edge transitions of excitons around 1.86 (1.84) and 2.06 (2.03) eV are observed by R and PzR measurements for doped and undoped MoS2, respectively. Hall effect measurements were carried out to consider the electrical effects of dopants on MoS2, which indicate that the doped MoS2 sample has a low mobility. Furthermore, using PC measurements we find that Co-doped MoS2 has a better spectral responsivity than undoped MoS2. Der Yuh Lin 林得裕 學位論文 ; thesis 92 zh-TW |
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碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === Undoped MoS2, Fe-doped MoS2, Co-doped MoS2, Ni-doped MoS2 and Nb-doped MoS2 layered crystals were grown by chemical vapor transport method using iodine as the transport agent. Optical properties were studied by reflectance (R) and piezoreflectance (PzR) measurements, while electrical properties were investigated by Hall effect measurements.
In addition, undoped MoS2 and Co-doped MoS2 were method using the photoconductivity (PC) and persistent photoconductivity (PPC) measurements.
According to electron spectroscopy for chemical analysis (ESCA) measurements, the results confirm that the dopants actually exist in the doped MoS2 samples. Two direct band edge transitions of excitons around 1.86 (1.84) and 2.06 (2.03) eV are observed by R and PzR measurements for doped and undoped MoS2, respectively. Hall effect measurements were carried out to consider the electrical effects of dopants on MoS2, which indicate that the doped MoS2 sample has a low mobility. Furthermore, using PC measurements we find that Co-doped MoS2 has a better spectral responsivity than undoped MoS2.
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author2 |
Der Yuh Lin |
author_facet |
Der Yuh Lin Cheng Ching Huang 黃政景 |
author |
Cheng Ching Huang 黃政景 |
spellingShingle |
Cheng Ching Huang 黃政景 A study of the doping effects on the electrical and optical properties of MoS2 |
author_sort |
Cheng Ching Huang |
title |
A study of the doping effects on the electrical and optical properties of MoS2 |
title_short |
A study of the doping effects on the electrical and optical properties of MoS2 |
title_full |
A study of the doping effects on the electrical and optical properties of MoS2 |
title_fullStr |
A study of the doping effects on the electrical and optical properties of MoS2 |
title_full_unstemmed |
A study of the doping effects on the electrical and optical properties of MoS2 |
title_sort |
study of the doping effects on the electrical and optical properties of mos2 |
url |
http://ndltd.ncl.edu.tw/handle/89083542706342823188 |
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