A study of the doping effects on the electrical and optical properties of MoS2

碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === Undoped MoS2, Fe-doped MoS2, Co-doped MoS2, Ni-doped MoS2 and Nb-doped MoS2 layered crystals were grown by chemical vapor transport method using iodine as the transport agent. Optical properties were studied by reflectance (R) and piezoreflectance (PzR) measure...

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Main Authors: Cheng Ching Huang, 黃政景
Other Authors: Der Yuh Lin
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/89083542706342823188
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spelling ndltd-TW-103NCUE54280112016-08-14T04:11:19Z http://ndltd.ncl.edu.tw/handle/89083542706342823188 A study of the doping effects on the electrical and optical properties of MoS2 摻雜對二硫化鉬光電特性之影響研究 Cheng Ching Huang 黃政景 碩士 國立彰化師範大學 電子工程學系 103 Undoped MoS2, Fe-doped MoS2, Co-doped MoS2, Ni-doped MoS2 and Nb-doped MoS2 layered crystals were grown by chemical vapor transport method using iodine as the transport agent. Optical properties were studied by reflectance (R) and piezoreflectance (PzR) measurements, while electrical properties were investigated by Hall effect measurements. In addition, undoped MoS2 and Co-doped MoS2 were method using the photoconductivity (PC) and persistent photoconductivity (PPC) measurements. According to electron spectroscopy for chemical analysis (ESCA) measurements, the results confirm that the dopants actually exist in the doped MoS2 samples. Two direct band edge transitions of excitons around 1.86 (1.84) and 2.06 (2.03) eV are observed by R and PzR measurements for doped and undoped MoS2, respectively. Hall effect measurements were carried out to consider the electrical effects of dopants on MoS2, which indicate that the doped MoS2 sample has a low mobility. Furthermore, using PC measurements we find that Co-doped MoS2 has a better spectral responsivity than undoped MoS2. Der Yuh Lin 林得裕 學位論文 ; thesis 92 zh-TW
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language zh-TW
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sources NDLTD
description 碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === Undoped MoS2, Fe-doped MoS2, Co-doped MoS2, Ni-doped MoS2 and Nb-doped MoS2 layered crystals were grown by chemical vapor transport method using iodine as the transport agent. Optical properties were studied by reflectance (R) and piezoreflectance (PzR) measurements, while electrical properties were investigated by Hall effect measurements. In addition, undoped MoS2 and Co-doped MoS2 were method using the photoconductivity (PC) and persistent photoconductivity (PPC) measurements. According to electron spectroscopy for chemical analysis (ESCA) measurements, the results confirm that the dopants actually exist in the doped MoS2 samples. Two direct band edge transitions of excitons around 1.86 (1.84) and 2.06 (2.03) eV are observed by R and PzR measurements for doped and undoped MoS2, respectively. Hall effect measurements were carried out to consider the electrical effects of dopants on MoS2, which indicate that the doped MoS2 sample has a low mobility. Furthermore, using PC measurements we find that Co-doped MoS2 has a better spectral responsivity than undoped MoS2.
author2 Der Yuh Lin
author_facet Der Yuh Lin
Cheng Ching Huang
黃政景
author Cheng Ching Huang
黃政景
spellingShingle Cheng Ching Huang
黃政景
A study of the doping effects on the electrical and optical properties of MoS2
author_sort Cheng Ching Huang
title A study of the doping effects on the electrical and optical properties of MoS2
title_short A study of the doping effects on the electrical and optical properties of MoS2
title_full A study of the doping effects on the electrical and optical properties of MoS2
title_fullStr A study of the doping effects on the electrical and optical properties of MoS2
title_full_unstemmed A study of the doping effects on the electrical and optical properties of MoS2
title_sort study of the doping effects on the electrical and optical properties of mos2
url http://ndltd.ncl.edu.tw/handle/89083542706342823188
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