Optical and electrical properties of GaN / InGaN multiple quantum wells grown on different pressure of the GaN / AlGaN super lattice under layers
碩士 === 國立彰化師範大學 === 電子工程學系 === 103 === This thesis aims at fabricating and characterizing of GaN/InGaN multiple quantum wells(MQWs)grown on GaN/AlGaN superlattice underlayer in different pressure, which were grown by MOCVD on(0001)sapphire substrates.Surface morphologies of these samples were exami...
Main Authors: | Ching-Chung Chang, 張青洲 |
---|---|
Other Authors: | Der-Yuh Lin |
Format: | Others |
Language: | zh-TW |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/60759366648673166905 |
Similar Items
-
Investigations of the luminescence of GaN and InGaN/GaN quantum wells
by: PecharromaÌn-Gallego, RauÌl
Published: (2004) -
GaN Based Solar Cell and Light Emitting Diode with Hybrid AlGaN/InGaN and GaN/InGaN Multiple Quantum Wells
by: Bing-HungHsieh, et al.
Published: (2015) -
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01) -
Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
by: Hideyuki Itakura, et al.
Published: (2020-02-01) -
The Study of Nitride Based Photodetectors Using AlGaN/GaN Heterojunction and InGaN/GaN Multi-Quantum-Well Structures
by: Yi-De Jhou, et al.
Published: (2004)