Investigation of the low stress TEOS SiO2 films by low temperature PECVD processing

• Main Authors: Yu-Ting Huang, 黃郁庭
• Other Authors: 陳昇暉
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/61098062573600876958

碩士 === 國立中央大學 === 光電科學與工程學系 === 103 === Tetra-ethyl-ortho-silicate (TEOS) SiO2 thin films were deposited using low temperature Plasma-enhanced chemical vapor deposition (PECVD) to achieve the performances of low stress and high density. Several process parameters including working pressure, O2 flow rate, TEOS flow rate, high and low frequency power rates, and working temperatures were adjusted to analyze the quality of the films. The results show when the deposition rate is high, the density of the film is low. And the lower density of the film will affect the lower stress. We found out the stress of TEOS SiO2 film has strong correlation by the high film density and slow deposit rates. The working pressure, O2 flow and TEOS flow rate can play important roles for the stress and density of the TEOS SiO2 films. Finally, we found out the high film density and low stress conditions keep the deposition pressure at 4torr, TEOS / O2 ratio at 8.1% and working temperature at 200 degrees. The deposition rate was about 41±2.0Å/sec. the etching rate was about 1100±55Å/sec.The stress of the SiO2 film was compressive and the stress value range was at 300±20Mpa.