| Summary: | 碩士 === 國立中央大學 === 光電科學與工程學系 === 103 === Tetra-ethyl-ortho-silicate (TEOS) SiO2 thin films were deposited
using low temperature Plasma-enhanced chemical vapor deposition
(PECVD) to achieve the performances of low stress and high density.
Several process parameters including working pressure, O2 flow rate,
TEOS flow rate, high and low frequency power rates, and working
temperatures were adjusted to analyze the quality of the films.
The results show when the deposition rate is high, the density
of the film is low. And the lower density of the film will affect
the lower stress. We found out the stress of TEOS SiO2 film has strong
correlation by the high film density and slow deposit rates. The
working pressure, O2 flow and TEOS flow rate can play important roles
for the stress and density of the TEOS SiO2 films.
Finally, we found out the high film density and low stress conditions
keep the deposition pressure at 4torr, TEOS / O2 ratio at 8.1%
and working temperature at 200 degrees. The deposition rate was about
41±2.0Å/sec. the etching rate was about 1100±55Å/sec.The stress of
the SiO2 film was compressive and the stress value range was at
300±20Mpa.
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