Study of Direct-bandgap transition from tensile strained Ge quantum-dots array
碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we formed abacus-bead SiGe pillar array by using SF6/C4F8 Inductively Coupled Plasma etching, and followed by selectivity oxidation transforming the abacus-bead SiGe pillar array into Ge nanocrystallites/SiO2 ¬pillar array. With the help of Si3N4...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92373395112431460325 |