Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation

碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in h...

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Bibliographic Details
Main Authors:	Ping-Sheng Hsiao, 蕭秉昇
Other Authors:	Yao-Tsung Tsai
Format:	Others
Language:	zh-TW
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/33164683411433634744

id	ndltd-TW-103NCU05442026
record_format	oai_dc
spelling	ndltd-TW-103NCU054420262016-05-22T04:41:03Z http://ndltd.ncl.edu.tw/handle/33164683411433634744 Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation 二維異質接面半導體元件之開發與模擬 Ping-Sheng Hsiao 蕭秉昇碩士國立中央大學電機工程學系 103 In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in heterojunction. The E_0 method has been verified by a pN heterojunction. And discuss problems of simulation happened on abrupt. Finally, we use the E_0 method to compare HBT with BJT to discuss the electrical characteristics. Yao-Tsung Tsai 蔡曜聰 2015 學位論文 ; thesis 54 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in heterojunction. The E_0 method has been verified by a pN heterojunction. And discuss problems of simulation happened on abrupt. Finally, we use the E_0 method to compare HBT with BJT to discuss the electrical characteristics.
author2	Yao-Tsung Tsai
author_facet	Yao-Tsung Tsai Ping-Sheng Hsiao 蕭秉昇
author	Ping-Sheng Hsiao 蕭秉昇
spellingShingle	Ping-Sheng Hsiao 蕭秉昇 Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
author_sort	Ping-Sheng Hsiao
title	Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
title_short	Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
title_full	Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
title_fullStr	Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
title_full_unstemmed	Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
title_sort	development of 2d heterojunction semiconductor model and its applications to device simulation
publishDate	2015
url	http://ndltd.ncl.edu.tw/handle/33164683411433634744
work_keys_str_mv	AT pingshenghsiao developmentof2dheterojunctionsemiconductormodelanditsapplicationstodevicesimulation AT xiāobǐngshēng developmentof2dheterojunctionsemiconductormodelanditsapplicationstodevicesimulation AT pingshenghsiao èrwéiyìzhìjiēmiànbàndǎotǐyuánjiànzhīkāifāyǔmónǐ AT xiāobǐngshēng èrwéiyìzhìjiēmiànbàndǎotǐyuánjiànzhīkāifāyǔmónǐ
_version_	1718277438253826048

Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation

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