Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation
碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in h...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33164683411433634744 |
| Summary: | 碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in heterojunction. The E_0 method has been verified by a pN heterojunction. And discuss problems of simulation happened on abrupt. Finally, we use the E_0 method to compare HBT with BJT to discuss the electrical characteristics.
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