Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition

碩士 === 國立中央大學 === 能源工程研究所 === 103 === Graphene is one of the popular materials in recent years, which has excellent electrical properties, high transmittance and high thermal conductivity; it can also be the flexible transparent conductive film. The present research are hoped to replace the traditio...

Full description

Bibliographic Details
Main Authors: Chien-Huan Wei, 魏健桓
Other Authors: Chien-Cheng Kuo
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/24363829163535734886
id ndltd-TW-103NCU05399016
record_format oai_dc
spelling ndltd-TW-103NCU053990162016-08-17T04:23:20Z http://ndltd.ncl.edu.tw/handle/24363829163535734886 Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition 電漿輔助低溫化學氣相沉積法直接成長石墨烯/金屬複合透明導電薄膜 Chien-Huan Wei 魏健桓 碩士 國立中央大學 能源工程研究所 103 Graphene is one of the popular materials in recent years, which has excellent electrical properties, high transmittance and high thermal conductivity; it can also be the flexible transparent conductive film. The present research are hoped to replace the traditional transparent conductive, such as Aluminum Zinc Oxide (AZO), Indium Tin oxide (ITO) etc. Because of graphene growth required a metal catalytic synthesis at very high temperature (1000 ℃), and the photovoltaic products are unable to process high-temperature. So, to replace the traditional transparent conductive by graphene, there are many challenges to overcome. In this study, the objective is directly grown graphene on optoelectronic products without high temperature process and transfer. First, coating the high transmittance metal film as the catalytic metal by magnetron sputter, and then growth graphene on metal thin film by low-temperature plasma enhanced chemical vapor deposition (PECVD), in order to maintain transparency, the metal film transmittance must be more than 80% at 550 nm (containing a transparent substrate, such as glass, quartz, sapphire, etc.), and the thickness must be 5 nm or less. Then use a low temperature plasma enhanced chemical vapor deposition to grow graphene at 250 ℃. The result is the graphene / metal composite transparent conductive film, which sheet resistance was 755.48 ohm / square, and transmittance remained at nearly 75% at 550 nm, complete growth in direct research on the transparent conductive film photovoltaic products. And research the low temperature process of PECVD of directly grown graphene on the substrate by using nickel's characteristics: dissolved and precipitation. Chien-Cheng Kuo 郭倩丞 2015 學位論文 ; thesis 87 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中央大學 === 能源工程研究所 === 103 === Graphene is one of the popular materials in recent years, which has excellent electrical properties, high transmittance and high thermal conductivity; it can also be the flexible transparent conductive film. The present research are hoped to replace the traditional transparent conductive, such as Aluminum Zinc Oxide (AZO), Indium Tin oxide (ITO) etc. Because of graphene growth required a metal catalytic synthesis at very high temperature (1000 ℃), and the photovoltaic products are unable to process high-temperature. So, to replace the traditional transparent conductive by graphene, there are many challenges to overcome. In this study, the objective is directly grown graphene on optoelectronic products without high temperature process and transfer. First, coating the high transmittance metal film as the catalytic metal by magnetron sputter, and then growth graphene on metal thin film by low-temperature plasma enhanced chemical vapor deposition (PECVD), in order to maintain transparency, the metal film transmittance must be more than 80% at 550 nm (containing a transparent substrate, such as glass, quartz, sapphire, etc.), and the thickness must be 5 nm or less. Then use a low temperature plasma enhanced chemical vapor deposition to grow graphene at 250 ℃. The result is the graphene / metal composite transparent conductive film, which sheet resistance was 755.48 ohm / square, and transmittance remained at nearly 75% at 550 nm, complete growth in direct research on the transparent conductive film photovoltaic products. And research the low temperature process of PECVD of directly grown graphene on the substrate by using nickel's characteristics: dissolved and precipitation.
author2 Chien-Cheng Kuo
author_facet Chien-Cheng Kuo
Chien-Huan Wei
魏健桓
author Chien-Huan Wei
魏健桓
spellingShingle Chien-Huan Wei
魏健桓
Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
author_sort Chien-Huan Wei
title Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
title_short Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
title_full Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
title_fullStr Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
title_full_unstemmed Direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
title_sort direct growth graphene / metal composite transparent conductive film by low temperature plasma enhanced chemical vapor deposition
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/24363829163535734886
work_keys_str_mv AT chienhuanwei directgrowthgraphenemetalcompositetransparentconductivefilmbylowtemperatureplasmaenhancedchemicalvapordeposition
AT wèijiànhuán directgrowthgraphenemetalcompositetransparentconductivefilmbylowtemperatureplasmaenhancedchemicalvapordeposition
AT chienhuanwei diànjiāngfǔzhùdīwēnhuàxuéqìxiāngchénjīfǎzhíjiēchéngzhǎngshímòxījīnshǔfùhétòumíngdǎodiànbáomó
AT wèijiànhuán diànjiāngfǔzhùdīwēnhuàxuéqìxiāngchénjīfǎzhíjiēchéngzhǎngshímòxījīnshǔfùhétòumíngdǎodiànbáomó
_version_ 1718377910060974080