| Summary: | 碩士 === 國立中央大學 === 能源工程研究所 === 103 === Graphene is one of the popular materials in recent years, which has excellent electrical properties, high transmittance and high thermal conductivity; it can also be the flexible transparent conductive film. The present research are hoped to replace the traditional transparent conductive, such as Aluminum Zinc Oxide (AZO), Indium Tin oxide (ITO) etc. Because of graphene growth required a metal catalytic synthesis at very high temperature (1000 ℃), and the photovoltaic products are unable to process high-temperature. So, to replace the traditional transparent conductive by graphene, there are many challenges to overcome.
In this study, the objective is directly grown graphene on optoelectronic products without high temperature process and transfer. First, coating the high transmittance metal film as the catalytic metal by magnetron sputter, and then growth graphene on metal thin film by low-temperature plasma enhanced chemical vapor deposition (PECVD), in order to maintain transparency, the metal film transmittance must be more than 80% at 550 nm (containing a transparent substrate, such as glass, quartz, sapphire, etc.), and the thickness must be 5 nm or less. Then use a low temperature plasma enhanced chemical vapor deposition to grow graphene at 250 ℃.
The result is the graphene / metal composite transparent conductive film, which sheet resistance was 755.48 ohm / square, and transmittance remained at nearly 75% at 550 nm, complete growth in direct research on the transparent conductive film photovoltaic products.
And research the low temperature process of PECVD of directly grown graphene on the substrate by using nickel's characteristics: dissolved and precipitation.
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