Effect of polishing processes on the total thickness variation of sapphire substrates

• Main Authors: Chen, Adams, 陳世和
• Other Authors: Wu,YewChung Sermon
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/73350743719774759957

碩士 === 國立交通大學 === 平面顯示技術碩士學位學程 === 103 === The purpose of this study is to investigate the effect of polishing processes on the Total Thickness Variation of sapphire substrates. We conducted the five experimental parameters: Polishing Pressure, Carrier Type, Polishing Pad, Pressure Pad and the Concentration of Slurry, for research. The Polishing Pressure is the main factor and caused proportional to sapphire substrates removal rate. Lower Pressure could reduce the Total Thickness Variation of sapphire substrates, in the other hand the insufficient sapphire substrates removal rate could damage the scratching and the decline in production. Change the carrier of polishing process, trim the edge of the polishing pad, may change the morphology of the substrate and improve the Total Thickness Variation of sapphire substrates. During temperature rise in the polishing process, the substrates displacement by adhesive melting and cause incontrollable factor for TTV. Paste pressure plate on the carrier back side, will worsen the Total Thickness variation of sapphire substrates. Adjust the Silica (SiO2) solution concentration could improve the Total Thickness Variation of sapphire substrates. When reduce polishing slurry ratio to 20wt%, it could improve silica precipitated crystallization, decrease the abrasive particle density, make better fluidity and equality removal replacement on the Total Thickness Variation of sapphire substrates. The article with Concentration of polish slurry is the main factor to effect the Total thickness variation of sapphire substrates.