Passivation methods for High Efficiency Hybrid Organic Silicon Heterojunction Photovoltaics
碩士 === 國立交通大學 === 顯示科技研究所 === 103 === In this study, we purpose to enhance the power efficiency of hybrid silicon heterojunction solar cell. There are a lot of defect on the surface, which will limit the efficiency of the photovoltaic. Therefore we expect to put passivation layer on hybrid solar cel...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/k58437 |
| Summary: | 碩士 === 國立交通大學 === 顯示科技研究所 === 103 === In this study, we purpose to enhance the power efficiency of hybrid silicon heterojunction solar cell. There are a lot of defect on the surface, which will limit the efficiency of the photovoltaic. Therefore we expect to put passivation layer on hybrid solar cell to reduce the surface defect. First, we use the ultrathin Al2O3 film to passivation the surface defect of the silicon nanowire which has large surface area. And we successfully improve the power efficiency from 11.8% to 12.4%.
On the other hand, we measure the minority carrier lifetime of Al2O3 film on silicon substrate with QSSPC WCT-120. The surface recombination velocity (SRV) can be less than 100cm/s. And we also made the device with Al2O3 on rear surface of silicon substrate. The performance of the device can be enhanced from 10.95% to 11.09%. But our group’s goal forward the all solution hybrid silicon heterojunction solar cell. So we select TiO2 sol-gel solution to be the passivation layer of the hybrid solar cells, and the performance of the device can be increase from 10.95% to 11.93%
|
|---|