| Summary: | 碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 103 === The Chemical Mechanical Polishing (CMP) is the key technology to the global planarization in the semiconductor manufacturing process. The Chemical Mechanical Polishing planarization process ensures that the follow-up process will not displacement by the surface uneven, the poor ability of the film coverage, and the exposure to alignment offset of the development process. Thereby affects the yield rate and the process stability of the components.
This thesis is based on controlling the critical part of conditions of the chemical mechanical polishing process in order to improve the formation of the micro scratch in Chemical Mechanical Polishing process. In order to avoid the micro scratch which causes the circuit broken or the short circuit, to maintain the stability of the chemical mechanical polishing process. In addition, the minor degree of micro scratch, even without causing the functional deletion, such as circuit broken or short circuit. It can also cause the defects on the appearance of the wafer, which causes the defective rate increasing, and decrease the quality of the product.
Identify the key factors of production. For example: the relationship between the polishing slurry supply system, a polishing pad, a polishing pad conditioner and micro scratch. Use the planning of the experiment to find the optimal control parameters, and to confirm the stability of the control parameter in a subsequent verification. In order to ensure the effectiveness of the control mode, to lower the defects caused by micro scratch, and to enhance product yield and device reliability.
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