A Study of Strain Effects on the Novel GAA Raised Source / Drain Sub-10nm Poly-Si NW Channel TFTs with Self-Aligned Corked Gate Structure
碩士 === 國立交通大學 === 理學院應用科技學程 === 103 === Recently, due to aggressive scaling of device structures in MOSFETs technology, the performance of MOSFETs has become a huge challenge in ultra large scale integrated (ULSI) fabrication. The control of short channel effect (SCE) becomes crucial owing to the sh...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05019387566102117069 |