Design of broad band millimeter-wave switches
碩士 === 國立交通大學 === 電信工程研究所 === 103 === This thesis presents two millimeter-wave circuits. Both of the proposed circuits are fabricated by Win 0.15μm InGaAs pseudomorphic high electron mobility transistor (pHEMT) MMIC process. First, we present a 60GHz SPDT T/R switch in shunt configuration and reduce...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99160456304101597805 |