| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 103 === Ni silicides have lower work function than that of metallic Ni so it might benefit to better field emission property from Ni silicides nanotips than conventional Ni nanotips. We report the fabrication process of Ni silicides nanotips using a high-temperature sputtering mechanism at difference temperatures. The reactions of Ni and Si occur during deposition which results to the growth of Ni silicides nanotips. We also investigate the field emission property of the Ni silicide nanotips covered by a MoS2 layer. The silicide phases, surface morphology and field emission property of the silicide nanotips with and without MoS2 sheets have been studied.
The phases of Ni silicides were found to be Ni, Ni3Si2, Ni31Si12, Ni2Si at 200℃ and Ni3Si2, Ni31Si12 at 400℃. The silicides nanotips formed at 200℃ and 400℃ covered by MoS2 show better field emission property with high enhancement.
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